Ceramic Laser Processing
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The laser drilling process for ceramics delivers superior edge quality. Precision laser cutting produces smooth edges and enhances the fracture strength of components.
The laser drilling process for ceramics delivers superior edge quality. Precision laser cutting produces smooth edges and enhances the fracture strength of components.
It enables ultra-small apertures. Combined with flexible drilling processes, it creates ideal micro-hole profiles.
It enables ultra-small apertures. Combined with flexible drilling processes, it creates ideal micro-hole profiles.
Micro-section of laser scribing: Depth 230 μm, substrate thickness 650 μm. The groove features regular profile, uniform trench and stable dimensional accuracy.
Micro-section of laser scribing: Depth 230 μm, substrate thickness 650 μm. The groove features regular profile, uniform trench and stable dimensional accuracy.
Compared with conventional CO₂ laser processes, USPL (Ultrashort Pulse Laser) produces no melting, recast layers or burrs. It delivers smoother edge cross-sections, reduces costs and improves yield rate.
Compared with conventional CO₂ laser processes, USPL (Ultrashort Pulse Laser) produces no melting, recast layers or burrs. It delivers smoother edge cross-sections, reduces costs and improves yield rate.
Compared with conventional CO₂ laser processes, USPL features a greatly reduced heat-affected zone. It eliminates risks of cracks, delamination and peeling, avoids thermal stress damage, and enhances long-term operational reliability.
Compared with conventional CO₂ laser processes, USPL features a greatly reduced heat-affected zone. It eliminates risks of cracks, delamination and peeling, avoids thermal stress damage, and enhances long-term operational reliability.
USPL ultrashort pulse laser cold machining is applied to SiC wafers. It causes no melting, recast layers or microcracks with zero thermal effect, delivering smooth wafer surfaces and stable electrical performance of devices.
USPL ultrashort pulse laser cold machining is applied to SiC wafers. It causes no melting, recast layers or microcracks with zero thermal effect, delivering smooth wafer surfaces and stable electrical performance of devices.
Specification Technology

一、核心技术优势

陶瓷激光切割钻孔设备


二、解决的行业痛点

陶瓷激光切割钻孔设备


三、详细技术规格

陶瓷激光切割钻孔设备


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Chinese‑English Catalog

For details, please refer to the product catalog.

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