Ceramic Laser Processing
Ceramic Laser Processing
PCB Laser Processing
PCB Laser Processing
Laser Drilling
The laser drilling process for ceramics delivers superior edge quality. Precision laser cutting produces smooth edges and enhances the fracture strength of components.
The laser drilling process for ceramics delivers superior edge quality. Precision laser cutting produces smooth edges and enhances the fracture strength of components.
It enables ultra-small apertures. Combined with flexible drilling processes, it creates ideal micro-hole profiles.
It enables ultra-small apertures. Combined with flexible drilling processes, it creates ideal micro-hole profiles.
Micro-section of laser scribing: Depth 230 μm, substrate thickness 650 μm. The groove features regular profile, uniform trench and stable dimensional accuracy.
Micro-section of laser scribing: Depth 230 μm, substrate thickness 650 μm. The groove features regular profile, uniform trench and stable dimensional accuracy.
Compared with conventional CO₂ laser processes, USPL (Ultrashort Pulse Laser) produces no melting, recast layers or burrs. It delivers smoother edge cross-sections, reduces costs and improves yield rate.
Compared with conventional CO₂ laser processes, USPL (Ultrashort Pulse Laser) produces no melting, recast layers or burrs. It delivers smoother edge cross-sections, reduces costs and improves yield rate.
Compared with conventional CO₂ laser processes, USPL features a greatly reduced heat-affected zone. It eliminates risks of cracks, delamination and peeling, avoids thermal stress damage, and enhances long-term operational reliability.
Compared with conventional CO₂ laser processes, USPL features a greatly reduced heat-affected zone. It eliminates risks of cracks, delamination and peeling, avoids thermal stress damage, and enhances long-term operational reliability.
USPL ultrashort pulse laser cold machining is applied to SiC wafers. It causes no melting, recast layers or microcracks with zero thermal effect, delivering smooth wafer surfaces and stable electrical performance of devices.
USPL ultrashort pulse laser cold machining is applied to SiC wafers. It causes no melting, recast layers or microcracks with zero thermal effect, delivering smooth wafer surfaces and stable electrical performance of devices.
Opening aperture: 10 μm, bottom aperture: 7 μm
Opening aperture: 10 μm, bottom aperture: 7 μm
Opening aperture: 20 μm, bottom aperture: 15 μm
Opening aperture: 20 μm, bottom aperture: 15 μm
Opening aperture: 25 μm, bottom aperture: 20 μm
Opening aperture: 25 μm, bottom aperture: 20 μm
Standard UV chemical curing is prone to thermal accumulation deformation and rough edges. Picosecond laser cold processing causes no thermal damage, delivering sharp edges and far higher precision than UV curing.
Standard UV chemical curing is prone to thermal accumulation deformation and rough edges. Picosecond laser cold processing causes no thermal damage, delivering sharp edges and far higher precision than UV curing.
Single-pulse and pulse sequence drilling are suitable for high-volume production. They enable precision micro-hole machining with high efficiency, regular hole shapes and excellent consistency.
Single-pulse and pulse sequence drilling are suitable for high-volume production. They enable precision micro-hole machining with high efficiency, regular hole shapes and excellent consistency.
Circular cutting is suitable for forming large apertures above 30 μm. It enables controllable hole wall taper, improves hole wall smoothness and precision, and meets the requirements of high-end precision processes.
Circular cutting is suitable for forming large apertures above 30 μm. It enables controllable hole wall taper, improves hole wall smoothness and precision, and meets the requirements of high-end precision processes.