Laser Micro-nano Circuit Resistance Trimming
Laser Micro-nano Circuit Resistance Trimming
Ceramic Laser Processing
Ceramic Laser Processing
PCB Laser Processing
PCB Laser Processing
PCBA Laser Processing
PCBA Laser Processing
Micro-nano Laser Processing Service
Digital-Link
Digital-Link
Serpentine-Cut
Serpentine-Cut
Ablation of NiCrSi in pressure sensor, line width: 32 μm
Ablation of NiCrSi in pressure sensor, line width: 32 μm
Precise cutting of 5 μm link
Precise cutting of 5 μm link
Sensor thin film ablation: removal of NiCr film on top of SiO₂ layer
Sensor thin film ablation: removal of NiCr film on top of SiO₂ layer
Resistor trimming process: Mode P features fast speed yet low precision; Mode D delivers high precision with limited sheet resistance compatibility; Mode L offers high precision and wide sheet resistance adaptability; Mode M provides significant resistance increment. Scanning edge trimming supports high-voltage isolation and custom settings.
Resistor trimming process: Mode P features fast speed yet low precision; Mode D delivers high precision with limited sheet resistance compatibility; Mode L offers high precision and wide sheet resistance adaptability; Mode M provides significant resistance increment. Scanning edge trimming supports high-voltage isolation and custom settings.
The laser drilling process for ceramics delivers superior edge quality. Precision laser cutting produces smooth edges and enhances the fracture strength of components.
The laser drilling process for ceramics delivers superior edge quality. Precision laser cutting produces smooth edges and enhances the fracture strength of components.
It enables ultra-small apertures. Combined with flexible drilling processes, it creates ideal micro-hole profiles.
It enables ultra-small apertures. Combined with flexible drilling processes, it creates ideal micro-hole profiles.
Micro-section of laser scribing: Depth 230 μm, substrate thickness 650 μm. The groove features regular profile, uniform trench and stable dimensional accuracy.
Micro-section of laser scribing: Depth 230 μm, substrate thickness 650 μm. The groove features regular profile, uniform trench and stable dimensional accuracy.
Compared with conventional CO₂ laser processes, USPL (Ultrashort Pulse Laser) produces no melting, recast layers or burrs. It delivers smoother edge cross-sections, reduces costs and improves yield rate.
Compared with conventional CO₂ laser processes, USPL (Ultrashort Pulse Laser) produces no melting, recast layers or burrs. It delivers smoother edge cross-sections, reduces costs and improves yield rate.
Compared with conventional CO₂ laser processes, USPL features a greatly reduced heat-affected zone. It eliminates risks of cracks, delamination and peeling, avoids thermal stress damage, and enhances long-term operational reliability.
Compared with conventional CO₂ laser processes, USPL features a greatly reduced heat-affected zone. It eliminates risks of cracks, delamination and peeling, avoids thermal stress damage, and enhances long-term operational reliability.
USPL ultrashort pulse laser cold machining is applied to SiC wafers. It causes no melting, recast layers or microcracks with zero thermal effect, delivering smooth wafer surfaces and stable electrical performance of devices.
USPL ultrashort pulse laser cold machining is applied to SiC wafers. It causes no melting, recast layers or microcracks with zero thermal effect, delivering smooth wafer surfaces and stable electrical performance of devices.
Opening aperture: 10 μm, bottom aperture: 7 μm
Opening aperture: 10 μm, bottom aperture: 7 μm
Opening aperture: 20 μm, bottom aperture: 15 μm
Opening aperture: 20 μm, bottom aperture: 15 μm
Opening aperture: 25 μm, bottom aperture: 20 μm
Opening aperture: 25 μm, bottom aperture: 20 μm
Standard UV chemical curing is prone to thermal accumulation deformation and rough edges. Picosecond laser cold processing causes no thermal damage, delivering sharp edges and far higher precision than UV curing.
Standard UV chemical curing is prone to thermal accumulation deformation and rough edges. Picosecond laser cold processing causes no thermal damage, delivering sharp edges and far higher precision than UV curing.
Single-pulse and pulse sequence drilling are suitable for high-volume production. They enable precision micro-hole machining with high efficiency, regular hole shapes and excellent consistency.
Single-pulse and pulse sequence drilling are suitable for high-volume production. They enable precision micro-hole machining with high efficiency, regular hole shapes and excellent consistency.
Circular cutting is suitable for forming large apertures above 30 μm. It enables controllable hole wall taper, improves hole wall smoothness and precision, and meets the requirements of high-end precision processes.
Circular cutting is suitable for forming large apertures above 30 μm. It enables controllable hole wall taper, improves hole wall smoothness and precision, and meets the requirements of high-end precision processes.
FR4, 1.6 mm – Machining result of nanosecond laser
FR4, 1.6 mm – Machining result of nanosecond laser
PI, 150 μm – Machining result of picosecond laser
PI, 150 μm – Machining result of picosecond laser
Process difference between milling cutter cutting and laser cutting
Process difference between milling cutter cutting and laser cutting
Green nanosecond laser. Micrograph perpendicular to the cutting direction for kerf taper angle measurement.
Green nanosecond laser. Micrograph perpendicular to the cutting direction for kerf taper angle measurement.
Micrograph of cutting sidewall by green nanosecond laser
Micrograph of cutting sidewall by green nanosecond laser
Micrograph of the top material surface after singulation by green nanosecond laser (Material thickness: 0.8 mm)
Micrograph of the top material surface after singulation by green nanosecond laser (Material thickness: 0.8 mm)
Resistor trimming process:P: Fast cutting speed with moderate precision;D: High precision, suitable for low sheet resistance;L: High precision, compatible with various sheet resistance values;M: Significant resistance adjustment range;Edge trimming: Scanning cutting supports high-voltage isolation and custom settings
Resistor trimming process:P: Fast cutting speed with moderate precision;D: High precision, suitable for low sheet resistance;L: High precision, compatible with various sheet resistance values;M: Significant resistance adjustment range;Edge trimming: Scanning cutting supports high-voltage isolation and custom settings
Sensor thin film ablation: Removal of SiO₂ top layer and NiCr thin film
Sensor thin film ablation: Removal of SiO₂ top layer and NiCr thin film
Precise cutting of 5 μm interconnect lines
Precise cutting of 5 μm interconnect lines
Pressure Sensor - NiCrSi Ablation, Line Width: 32 μm
Pressure Sensor - NiCrSi Ablation, Line Width: 32 μm
Serpentine-Cut
Serpentine-Cut
Digital-Link
Digital-Link