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· Intuitive and easy-to-use controls; data can be exported for traceability.
· Comprehensive surface profile parameters for wafers including TTV, BOW, WARP, LTV and SOR.
· High-order residual comparison and analysis for accurate topography deviation evaluation.
· Compatible with diverse samples such as high/low reflectivity silicon wafers, composite substrates and thin films.
· Adaptable to long-distance operating conditions to strictly control nano-level thinning processes.
· Customizable integrated EFEM solutions available.
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· Nanometer-level accuracy with full-area scanning over a 200×200 mm large field of view.
· Capable of measuring the parallelism of two sides on workpieces with steps up to 70 mm.
· Equipped with a spectral module to simultaneously inspect surface profile and roughness.
· Automatic measurement and intelligent judgment, ideal for full batch inspection.
· Proprietary optical path enables simultaneous dual-side scanning for accurate thickness and parallelism measurement.
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