·  Features a 14mm large field of view and combined multiple objectives, enabling both wide-range observation and precision measurement.

·  One-touch automatic leveling and focusing supports long-distance measurement, suitable for deep holes and high-drop inspection.

·  Integrates interferometric analysis and true-color imaging for clear details and intuitive, comprehensive measurement.

·  One-click full-area roughness detection with a wide measuring range, compatible with various workpieces.

·  Nanometer-level accuracy with full-area scanning over a 200×200 mm large field of view.

·  Capable of measuring the parallelism of two sides on workpieces with steps up to 70 mm.

·  Equipped with a spectral module to simultaneously inspect surface profile and roughness.

·  Automatic measurement and intelligent judgment, ideal for full batch inspection.

·  Proprietary optical path enables simultaneous dual-side scanning for accurate thickness and parallelism measurement.

·  Non-contact and non-destructive testing with no additional load; suitable for ultra-thin and miniature devices.

·  Ultra-high precision with sub-picometer displacement resolution. Features tiny measuring spots for accurate testing on micro areas.

·  Ultra-wide frequency range from DC up to GHz, covering both low and high frequency vibrations.

·  Simultaneous 3D measurement; in-plane and out-of-plane vibrations are acquired integrally with full-field vibration mode visualization.

·  Patented IRIS silicon-transparent measurement technology enables testing of encapsulated internal chips without decapsulation.

·  Intuitive and easy-to-use controls; data can be exported for traceability.

·  Comprehensive surface profile parameters for wafers including TTV, BOW, WARP, LTV and SOR.

·  High-order residual comparison and analysis for accurate topography deviation evaluation.

·  Compatible with diverse samples such as high/low reflectivity silicon wafers, composite substrates and thin films.

·  Adaptable to long-distance operating conditions to strictly control nano-level thinning processes.

·  Customizable integrated EFEM solutions available.

·  Coaxial vertical scanning avoids obstructions. With a single frame of 90 mm, it delivers efficient large-field stitching.

·  Supports detection of deep holes up to 130 mm deep with a 30:1 aspect ratio. It achieves one-shot measurement with an accuracy of ±2 mm.

·  The coaxial optical path features superior angular performance for precise measurement of cutting edge radius and angles.

·  Intelligently fits and calculates the radius of curved surfaces to eliminate manual measurement errors.

·  Equipped with a rotary scanning structure to realize 3D profile measurement of inner hole walls.

·  Compatible with workpieces of various materials. No surface treatment is required for efficient and convenient inspection.

·  Delivers sub-micron high precision. Large-field measurement is available without stitching, with optional multiple probes.

·  Adopts layered scanning technology to penetrate the surface and accurately detect internal structural features.