Silicon Nitride Optical Waveguide
Silicon Nitride Optical Waveguide
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Lithium Niobate Optical Waveguide Fabrication
Lithium Niobate Optical Waveguide Fabrication
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Silicon Optical Waveguide
Silicon Optical Waveguide
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6‑inch PIC
Silicon Nitride Optical Waveguide
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Silicon Nitride Optical Waveguide
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Top cladding: SiO₂ deposited by PECVD, 800 nm-thick SiO₂ grown via PECVD
Top cladding: SiO₂ deposited by PECVD, 800 nm-thick SiO₂ grown via PECVD
Top cladding with SiO₂ grown by PECVD; Coverage performance of 800 nm SiO₂ deposited via PECVD
Top cladding with SiO₂ grown by PECVD; Coverage performance of 800 nm SiO₂ deposited via PECVD
Top cladding: SiO₂ grown by PECVD; Macro image of 800 nm SiO₂ deposited via PECVD
Top cladding: SiO₂ grown by PECVD; Macro image of 800 nm SiO₂ deposited via PECVD
Silicon Nitride (SiN) fabricated by ICP etching, compatible with 200 nm and 400 nm etching processes.
Silicon Nitride (SiN) fabricated by ICP etching, compatible with 200 nm and 400 nm etching processes.
Silicon Nitride (SiN) fabricated via ICP etching. The etching selectivity remains stably at 1.5. Etching uniformity of 6-inch wafers is less than 3% with excellent consistency.
Silicon Nitride (SiN) fabricated via ICP etching. The etching selectivity remains stably at 1.5. Etching uniformity of 6-inch wafers is less than 3% with excellent consistency.
Silicon Nitride (SiN) formed by ICP etching, sidewall verticality over 88°, well-defined profile
Silicon Nitride (SiN) formed by ICP etching, sidewall verticality over 88°, well-defined profile
Lithium Niobate Optical Waveguide Fabrication
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Lithium Niobate Optical Waveguide Fabrication
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LN Modulator Bandwidth: 60 GHz
LN Modulator Bandwidth: 60 GHz
Q factor of All-Pass Microring: 1×10⁶
Q factor of All-Pass Microring: 1×10⁶
Grating Coupler Loss: 8 dB
Grating Coupler Loss: 8 dB
Directional Coupler
Directional Coupler
1×2 MMI Insertion Loss: 0.2 dB
1×2 MMI Insertion Loss: 0.2 dB
Crossed waveguide loss: 0.02 dB
Crossed waveguide loss: 0.02 dB
Silicon Optical Waveguide
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Silicon Optical Waveguide
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Microring modulator: 30 GHz bandwidth
Microring modulator: 30 GHz bandwidth
Crossed waveguide loss: 0.028 dB per unit
Crossed waveguide loss: 0.028 dB per unit
Heating electrode: TiN thermal electrode
Heating electrode: TiN thermal electrode
Electro-optic switch extinction ratio: 45 dB
Electro-optic switch extinction ratio: 45 dB
All-Pass Micro-ring Q: 10 to the power of 5
All-Pass Micro-ring Q: 10 to the power of 5
1×2 MMI Insertion Loss: 0.043 dB per port
1×2 MMI Insertion Loss: 0.043 dB per port