Silicon Nitride Optical Waveguide
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Top cladding: SiO₂ deposited by PECVD, 800 nm-thick SiO₂ grown via PECVD
Top cladding: SiO₂ deposited by PECVD, 800 nm-thick SiO₂ grown via PECVD
Top cladding with SiO₂ grown by PECVD; Coverage performance of 800 nm SiO₂ deposited via PECVD
Top cladding with SiO₂ grown by PECVD; Coverage performance of 800 nm SiO₂ deposited via PECVD
Top cladding: SiO₂ grown by PECVD; Macro image of 800 nm SiO₂ deposited via PECVD
Top cladding: SiO₂ grown by PECVD; Macro image of 800 nm SiO₂ deposited via PECVD
Silicon Nitride (SiN) fabricated by ICP etching, compatible with 200 nm and 400 nm etching processes.
Silicon Nitride (SiN) fabricated by ICP etching, compatible with 200 nm and 400 nm etching processes.
Silicon Nitride (SiN) fabricated via ICP etching. The etching selectivity remains stably at 1.5. Etching uniformity of 6-inch wafers is less than 3% with excellent consistency.
Silicon Nitride (SiN) fabricated via ICP etching. The etching selectivity remains stably at 1.5. Etching uniformity of 6-inch wafers is less than 3% with excellent consistency.
Silicon Nitride (SiN) formed by ICP etching, sidewall verticality over 88°, well-defined profile
Silicon Nitride (SiN) formed by ICP etching, sidewall verticality over 88°, well-defined profile
Specification Technology

电子束光刻与6寸DUV直接流片工艺参数表

硅光波导


硅光波导



SiN 光波导工艺偏差参数表


一、200nm SiN 工艺偏差

硅光波导


二、400nm SiN 工艺偏差

硅光波导


我们为您提供的氮化硅薄膜晶圆的 折射率和吸收数据 ：

（在下载目录按钮打包）

200nm SIN

ZJ-200nm-LPCVD+Annealing-SIN.txt

300nm SIN

ZJ-300nm-SINOI-LPCVD+Annealing.txt

400nm SIN

ZJ-400nm-LPCVD+Annealing-SIN.txt


加工能力一览表

光栅及超结构加工


为提高沟通效率，各类加工业务流程及必读信息

光栅及超结构加工


镀膜材料与工艺对照表

光栅及超结构加工


Product Catalogue

Chinese‑English Catalog

For details, please refer to the product catalog.

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